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Yanzhi Photovoltaic cell PL detector model: CHT-80D

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The system uses the area of 230mmX230mm. Under the action of laser spot, the silicon or cell stimulates infrared light. The infrared image of the silicon or cell is collected by the infrared camera, and the infrared image is used for defect detection.

The PL detector is suitable for single-crystal or polycrystalline silicon wafers and flexible perovskite cell laminated cells, which can be independently formed into equipment or embedded in the production line for online detection. Detectable defects include black heart, black edge, black mass, hidden cracks, cracks, fragments, low-efficiency tablets, black lines, missing angles, and broken edge, etc. The system adopts deep learning and artificial intelligence algorithm to realize the automatic identification of various defects of single crystal and polycrystal.


Imaging effect map           

Flexible perovskite

图片1

Overlay perovskite

图片1

Overlay perovskite

3

Overlay perovskite

4

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  • Technical Parameters
Production quota

Capacity

0.5s/pcs

Applicable specifications

Cell (0BB-MBB), laminated perovskite cell, flexible perovskite

156mm*156mm--230mm*230mm  300mm*300mm

Battery thickness

140-300μm

Pending method

Manual feeding

Applicable process

Silicon wafers, cells, flexible perovskite, laminated perovskite cells.

Measurement index

Camera resolution

500W

Camera type

CCD

Laser power

30W / 50W (optional)

Exposure time

0.1~1S (adjustable)

Indicator

24 inches (ultra clear)

Defect type

Normal test: hidden crack / debris / low efficiency sheet / sintered mesh / material defect.

Image processing

Image display: image amplification, barcode display, defect marking.

Image processing: gain, grayscale, brightness, and contrast adjustment.

Electrical indicators

Characteristic

1) Non-contact detection, to avoid secondary damage;

2) Specific image acquisition system (no darkroom), high image quality;

3) High detection efficiency, which can be embedded in the production line, for online detection;

4) Using artificial intelligence algorithm to realize automatic identification of defects without manual intervention;

5) A wide range of adaptation, can be used in various types of silicon wafer or battery, but also suitable for each stage of defect detection.

Work environment

Temperature: 25℃± 10℃; Relative humidity: 85%

Source

AC220V/50Hz/10A

Equipment size

600mm*650mm*1000mm

Solutions

 IEC61215

IEC61730

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